MBE Deposition Cluster – Createc

The Molecular Beam Epitaxy (MBE) system allows to grow chalcogenides on either 2” wafers of small samples up to 10×10 mm placed on flag-style sample holders. The MBE deposition chamber is equipped with a quartz microbalance to measure deposition rates and a RHEED to verify crystallinity and epitaxial growth. The whole chamber has a shroud which allows to cool down the chamber walls with liquid nitrogen and improve the vacuum conditions during deposition. Is it possible to grow multiple materials simultaneously (co-deposition) or produce multilayers alternating the materials in an automated way.

• Substrate temperature up to 1100°C in preparation, and up to 800°C during deposition
• Possible substrate size: 2” wafers, 10×10 mm samples (on flag-style holders)
• Materials: Ge, Te, Sn, Sb
• 10×10 mm samples are compatible with the transfer to a Vacuum Suitcase
• Possibility to transfer flag style sample holders directly to the Specs ArPES system in vacuum